Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing
نویسندگان
چکیده
منابع مشابه
Photoluminescence enhancement in CdS quantum dots by thermal annealing
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15 صفحه اولSuppression of the internal electric field effects in ZnO/Zn(0.7)Mg(0.3)O quantum wells by ion-implantation induced intermixing.
Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark...
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ژورنال
عنوان ژورنال: Journal of Luminescence
سال: 2009
ISSN: 0022-2313
DOI: 10.1016/j.jlumin.2008.09.006